| 摘要 |
PURPOSE: A mask structure for a photolithography process is provided to minimize image distortion on a wafer such that the image distortion is caused by a scattering phenomenon of an exposure light source at the edge of a pattern of a design layout embodied on a mask. CONSTITUTION: A mask substrate(10) is prepared. A polarized light filter layer(20) is attached to the mask substrate. The pattern(30) is formed on the mask substrate according to a predetermined layout. Only the light of 90 degree with respect to the mask passes through the polarized light filter layer formed on the front surface of the mask substrate. The pattern is formed on the polarized light filter layer.
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