| 摘要 |
PURPOSE: A method for fabricating a metal interconnection of a semiconductor device is provided to improve contact resistance and to prevent a junction leakage current characteristic from being deteriorated, by removing a contact surface between an interconnection metal layer and silicide without increasing the thickness, Y1. CONSTITUTION: An interlayer dielectric(32) is formed on a semiconductor substrate(31). The interlayer dielectric and the semiconductor substrate are patterned to form an interconnection contact. A silicon layer is formed in the interconnection contact. An interconnection metal layer(35) is formed on the silicon layer. A heat treatment process for silicide is performed to transform the interconnection metal layer and the silicon layer into metal silicide.
|
