HALFTONE PHASE SHIFT MASK OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A halftone phase shift mask of a semiconductor device is provided to easily confine a pattern and to increase an etch margin, by eliminating a sidelobe phenomenon to easily select an exposure condition of a photolithography process so that the halftone phase shift mask overlaps a chrome mask. CONSTITUTION: A phase shift pattern is formed on a transparent substrate of a mask(100). A mask(200) has a chrome pattern(20) formed in a region where a sidelobe phenomenon occurs in the mask, overlapping the mask having the phase shift mask. The halftone phase shift mask includes the mask having the phase shift pattern and the mask having the chrome pattern.