| 摘要 |
PURPOSE: An image sensor capable of increasing photosensitivity is provided to generate a large quantity of electrons regarding the same incident light, by forming an insulation layer inside a photodiode or on the lower surface of the photodiode and by making the photodiode function as a capacitor for storing electrons. CONSTITUTION: A semiconductor substrate(30) is of the first conductivity type. The first impurity region(35) of the second conductivity type constitutes the photodiode, formed in the semiconductor substrate. The second impurity region(37) of the first conductivity type constitutes the photodiode, formed in the semiconductor substrate on the first impurity region. The insulation layer is formed on an interface between the first impurity region and the semiconductor substrate.
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