| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to maximize the surface area of the lower electrode of ruthenium without increasing the height of a capacitor structure, and to guarantee stable capacitance by preventing oxygen from being diffused from the lower electrode of ruthenium to a capacitor lower structure like a polysilicon plug and a barrier metal layer. CONSTITUTION: A lower layer having a predetermined conductive structure and a predetermined insulation structure is formed on a semiconductor substrate. A buffer layer is formed on the lower layer. A chemical vapor deposition(CVD) process is performed to form a ruthenium layer for a lower electrode on the buffer layer. A heat treatment process is performed to cause crystallization and conglomeration of the ruthenium layer for the lower electrode so that the ruthenium layer for the lower electrode is transformed into a hemispherical shape. A dielectric thin film(18) and an upper electrode are formed.
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