| 摘要 |
PURPOSE: A semiconductor device is provided to prevent a resistor layer from being damaged in a subsequent etch process, by overcoating a floating gate on a poly resistor layer as the resistor layer. CONSTITUTION: An active region and an inactive region are defined in a semiconductor device. A field oxide layer(12) is formed in the inactive region of the semiconductor device. The poly resistor layer is formed on the field oxide layer. The floating gate(15b) protects the poly resistor layer, formed on the poly resistor layer. A gate electrode is formed on the active region. A source/drain region is formed at both sides of the gate electrode. An interlayer dielectric(16) is formed on the entire surface including the gate electrode, having a contact hole(19) in the resistor layer. A metal interconnection is connected to the poly resistor layer through the contact hole.
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