| 摘要 |
PURPOSE: A chemical filter for a semiconductor clean room is provided to fabricate a semiconductor device having more than 256 mega dynamic random access memory(DRAM), by eliminating nitrogen oxides, silicon oxides or alkali oxides. CONSTITUTION: The inside and outside of a case(42) are coated to prevent corrosion. A mesh net(46) is coated to prevent corrosion, coupled to the case. The mesh net is installed in the front and rear portions of a media(44) so that the air flows smoothly. The media is chemically process to collect dust and gas. A neutralized epoxy sealing material(48) seals the four surfaces of a portion in which the mesh, the mesh net and the case are closely attached to one another so that the air does not leak. A gasket(50) is installed in an outer end of the case so that the air does not leak through a gap between an air conditioning duct(52) and the case.
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