| 摘要 |
PURPOSE: A semiconductor device is provided to rapidly reduce an electrical resistance by using a GMR(Giant Magneto-Resistance) phenomenon through a magnetic field sensor. CONSTITUTION: A semiconductor device comprises a first interlayer dielectric(51) having a magnetic field sensor(53), metal layers(55) connected to the magnetic field sensor(53) formed on the first interlayer dielectric(51), a second interlayer dielectric(57) planarizing the metal layers(55), and inductors(59) formed on the second interlayer dielectric(57). At this point, a magnetic field(61) is supplied from the upper portion of the resultant structure to the magnetic field sensor(53) capable of measuring the field intensity through a measurement of a resistance, so that the magnetic field(61) is controlled by a feedback to the inductors(59) through the magnetic field sensor(53) using a GMR phenomenon.
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