| 摘要 |
PURPOSE: A DRAM(Dynamic Random Access Memory) cell is provided to simplify manufacturing processes by forming an MISSM(Metal-Insulator-Semi-Semi-Metal) shaped diode-type structure. CONSTITUTION: A pad oxide(43), a nitride(45), a tungsten layer(47) as a bit line, and a first semiconductor substrate(31) having a p-type dopants region(51) are sequentially formed on a second semiconductor substrate(41). Isolation layers(49) are formed on both sidewalls of the resultant structure. Then, a word line(55) is formed on the upper portion of the resultant structure, after forming a gate oxide(53). At this time, the diode-type resultant structure has an MISSM shape from the tungsten layer(47) to the word line(55).
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