| 摘要 |
PURPOSE: A method for fabricating a memory device is provided to prevent penetration of hydrogen or moisture generated when an intermetallic dielectric and a passivation layer are formed, by electrically connecting a capacitor with a transistor and by forming a Si3N4 layer for preventing penetration of hydrogen before the intermetallic dielectric and the passivation layer are formed. CONSTITUTION: The transistor is formed on a semiconductor substrate(21). The first interlayer dielectric(26) is formed on the entire surface including the transistor. The capacitor composed of a lower electrode(28), a ferroelectric thin film(29) and an upper electrode(30) is formed on the first interlayer dielectric. A local interconnection(33) electrically connects the transistor with the capacitor. A hydrogen penetration barrier layer is formed on the local interconnection. A passivation layer(36) is formed on the hydrogen penetration barrier layer.
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