发明名称 ETCHANT FOR UNDER BUMP MULTI-METALLIZATION LAYER OF FLIP CHIP
摘要 PURPOSE: An etchant for under bump multi-metallization(UBM) layer of a flip chip is provided to form a bump and the UBM layer having a high reliability by etching the UBM layer using the etchant so as to complete the bump, and solidly package the flip chip accordingly using the bump and UBM layer that are formed by using the etchant. CONSTITUTION: The etchant for under bump multi-metallization(UBM) layer(350) of a flip chip comprises a first etchant for a copper film(356) comprising 0.96 to 4.8 wt.% of sulfuric acid, 0.32 to 1.6 wt.% of hydrogen peroxide and a balance of water; a second etchant for a chromium/copper mixed film(354) comprising 19.2 to 96 wt.% of hydrochloric acid, 0.32 to 1.6 wt.% of hydrogen peroxide and a balance of water; and a third etchant for a chromium film(352) comprising 6.4 to 32 wt.% of hydrochloric acid and a balance of water.
申请公布号 KR20020054886(A) 申请公布日期 2002.07.08
申请号 KR20000084150 申请日期 2000.12.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, CHUN DEUK
分类号 C23F1/18;(IPC1-7):C23F1/18 主分类号 C23F1/18
代理机构 代理人
主权项
地址