PLASMA DEPOSITION EQUIPMENT AND DEPOSITION FILM FORMATION METHOD USING THE SAME

摘要

PURPOSE: A plasma deposition equipment and a deposition film formation method using the same are provided to enhance the step coverage by connecting a power supply to a heater block. CONSTITUTION: A reacting gas is supplied to a spreader(24) through a gas inlet(25). The reacting gas consisted of TiCl4, Ar and H2 gas becomes the plasma by making the high frequency wave supply to the spreader through the operation of a high frequency wave generator(26). A deposition film is formed on a silicon wafer by applying the negative voltage to the power supply(100) connecting to the heater block(23). If the negative voltage is applied to the silicon wafer, the Ar and the H cation in the plasma are accelerated and collided to the silicon wafer. The collision transfers an addition energy excepting the thermal energy from the heater block to the silicon wafer. The H cation accelerated to the silicon wafer not perfectly reduces in the plasma and reduces TiClx absorbed to the silicon wafer. The reaction between the silicon wafer and Ti is promoted by the collision energy of the R cation. Thus, the more dense and excellent crystalline TiSix thin film is obtained at the same temperature rather than a conventional deposition method not applying the voltage to the substrate.