| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a bit line short-circuit phenomenon and a bit line corrosion phenomenon occurring in dry-etching a bit line, by using a SiH4 soak process at a pressure of 80-100 Torr. CONSTITUTION: A gate(13) is formed on a semiconductor substrate(11). A source/drain region(16) is formed in the semiconductor substrate at both side surfaces of a gate electrode. An interlayer dielectric is formed on the semiconductor substrate including the gate. The interlayer dielectric is selectively removed to expose a predetermined portion of the gate and the source/drain region. A barrier layer(20) and an adhesion layer(21) are sequentially formed on the semiconductor substrate including a trench. A pretreatment process is performed in an atmosphere including nitrogen gas of 400-600 sccm. The SiH4 soak process and a SiH4 reduction process are sequentially performed in a pressure of 80-100 Torr to form a metal layer for the bit line on the adhesion layer.
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