| 摘要 |
PURPOSE: A formation method of multilayer interconnection is provided to decrease an interval between first interconnections and to increasing a contact surface between a first and a second interconnections by forming plugs on the first interconnections. CONSTITUTION: After sequentially forming a first metal layer for a first interconnection(33), a first nitride and a first photoresist pattern, the first interconnections(33) are formed by selectively etching the first nitride and the first metal layer using the first photoresist pattern as a mask. After sequentially forming second nitride spacers, a first interlayer oxide(39) and a second photoresist pattern, the first interlayer oxide(39) is selectively etched to expose the first nitride by using the second photoresist pattern as a mask. Then, a first contact hole is formed by etching the first nitride and second nitride spacers using the first interlayer oxide(39) as a mask and a first metal layer(43a) for a plug is filled into the first contact hole, thereby increasing a contact surface between the first and a second interconnections.
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