| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve an electrical characteristic by eliminating a void inside a plug, and to increase yield by preventing a phenomenon that the plug is not formed. CONSTITUTION: A lower metal layer(22) is formed in a predetermined region of a semiconductor substrate(21). An interlayer dielectric(23) is formed on the lower metal layer. The interlayer dielectric is selectively removed to expose a predetermined portion of the lower metal layer so that a contact hole is formed. A photoresist layer is applied on the semiconductor substrate and is selectively patterned. The side surface of the upper portion of the contact hole is removed to increase the area of the upper portion of the contact hole by using the patterned photoresist layer. The photoresist layer is eliminated and an adhesion layer(26) is deposited on the semiconductor substrate. The contact hole is filled with a conductive material to form a plug.
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