| 摘要 |
PURPOSE: A formation method of copper interconnections of semiconductor devices is provided to form a copper plating layer having a high degree of purity without a defect by dipping an entire wafer into an electroless copper plating solution. CONSTITUTION: A barrier metal(12) is formed on a wafer(11) formed with an insulating layer having a copper interconnection pattern. Then, a photoresist pattern is formed on the barrier metal(12) by selectively removing a photoresist so as to expose the edge portion of the barrier metal(12). An activation layer is formed to enclose the entire surface of the resultant structure except for the photoresist pattern region by activating the surface with Pd grains through an activation bath. Then, the photoresist pattern is removed and a copper layer(15) is then formed to completely enclose the resultant structure by dipping into a bath(18) having an electroless copper plating solution(19). After remaining the copper layer(15) only on the front surface of the resultant structure, copper interconnections are formed by a polishing process.
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