| 摘要 |
PURPOSE: A method for fabricating an aluminum alloy thin film of a semiconductor device is provided to maintain low resistance of an interconnection even after a heat treatment process, by using a barrier metal and an Al-Si-Cu thin film of low reactivity. CONSTITUTION: The barrier metal is formed on a lower layer(11). The Al-Si-Cu thin film(13) is formed on the barrier metal. An Al-Cu thin film(14) is formed on the Al-Si-Cu thin film. One of a silicon substrate, an oxide layer, a nitride layer, phospho silicate glass(PSG), boro phospho silicate glass(BPSG), spin on glass(SOG) or polymer is used as the lower layer.
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