| 摘要 |
PURPOSE: A method for fabricating an isolation layer of a semiconductor device is provided to improve a hump characteristic, by having a shallow moat portion and by making the recess portion of an isolating oxide layer small. CONSTITUTION: A pad oxide layer and a pad nitride layer are sequentially formed on a semiconductor substrate(11). The pad nitride layer, the pad oxide layer and the semiconductor substrate are selectively patterned to form a trench(14) in the semiconductor substrate. An oxide layer for filling the trench is formed on the exposed surface of the resultant structure including the trench. The oxide layer is blanket-etched and planarized until the pad nitride layer is exposed. The pad nitride layer and the pad oxide layer are eliminated. A chemical vapor deposition(CVD) oxide layer is formed on the resultant structure. The CVD oxide layer is removed. A gate oxide layer and a polysilicon layer are sequentially formed on the resultant structure. The polysilicon layer and the gate oxide layer are selectively patterned to form a gate line and a gate oxide layer pattern(17a).
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