发明名称 METHOD FOR FABRICATING METAL PAD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: A method for fabricating a metal pad of a semiconductor device is provided to effectively prevent the metal layer form being peeled off in a packaging process, by implanting aluminum ions into the surface of a spin-on-glass(SOG) layer as an interlayer dielectric and by performing a heat treatment process to form an aluminum oxide layer while the SOG layer is transformed from a flexible structure into a hard structure. CONSTITUTION: A semiconductor substrate(11) having the first metal layer(12) of a pad type is prepared. An interlayer dielectric made of a planarization material having an oxide layer component is formed on the semiconductor substrate to cover the first metal layer. Aluminum ions are implanted into the surface of the interlayer dielectric. The second metal layer(15) of a pad type is formed on the interlayer dielectric having the implanted aluminum ions. A passivation layer(16) is formed on the interlayer dielectric to cover the side surface of the second metal layer. A heat treatment process is performed regarding the resultant structure to form the aluminum oxide layer(14a) in the interlayer dielectric having the implanted aluminum ions.
申请公布号 KR20020053946(A) 申请公布日期 2002.07.06
申请号 KR20000081925 申请日期 2000.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK, JONG SEONG
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址