发明名称 |
GERMANIUM SILICON MODULATION DOPED FIELD EFFECT TRANSISTOR USING METAL-OXIDE LAYER GATE AND FABRICATING METHOD THEREOF |
摘要 |
PURPOSE: A germanium silicon modulation doped field effect transistor(MODFET) using a metal-oxide layer gate is provided to improve a linear characteristic of a hetero-junction complementary metal oxide semiconductor(CMOS), by using a hetero junction structure of SiGe/C and SiGe/Si. CONSTITUTION: A buffering thin film made of silicon is grown on a silicon substrate. A SiGe channel layer and a silicon cap layer are formed on the buffering thin film. A low temperature buffer layer and a SiGe buffer layer are grown on the silicon substrate by a low temperature process. A defect caused by lattice mismatch applied from the silicon substrate to an epi layer is artificially formed.
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申请公布号 |
KR20020054108(A) |
申请公布日期 |
2002.07.06 |
申请号 |
KR20000082803 |
申请日期 |
2000.12.27 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KANG, JIN YEONG;KIM, HONG SEUNG;LEE, SEUNG YUN;SIM, GYU HWAN |
分类号 |
H01L21/336;H01L21/335;H01L29/778;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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地址 |
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