发明名称 METHOD FOR MEASURING COMA OF EXPOSURE EQUIPMENT
摘要 PURPOSE: A method for measuring coma of exposure equipment is provided to correct coma aberration by disposing a checked contact hole pattern array of a square or rectangle type and by measuring the width of right/left outermost pattern when the contact hole in the center has a predetermined size, and to easily quantify the coma aberration by controlling the size or pitch of the contact hole pattern. CONSTITUTION: Patterns are formed on a predetermined substrate. A plurality of the patterns as the contact hole patterns(20) are formed of a checked type in an X-Y direction. The line width and pitch of the right/left outermost patterns is measured to quantify the coma aberration of the exposure equipment. An asymmetrical line width by the coma aberration is (L1-L2)/(L1+L2) wherein L1 and L2 are the line width of both outermost patterns in a desired measurement direction when the center pattern of the contact hole patterns has a specific line width.
申请公布号 KR20020053902(A) 申请公布日期 2002.07.06
申请号 KR20000081781 申请日期 2000.12.26
申请人 HYNIX SEMICONDUCTOR INC. 发明人 AHN, CHANG NAM;KIM, SANG JIN
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址