发明名称 |
METHOD FOR MEASURING COMA OF EXPOSURE EQUIPMENT |
摘要 |
PURPOSE: A method for measuring coma of exposure equipment is provided to correct coma aberration by disposing a checked contact hole pattern array of a square or rectangle type and by measuring the width of right/left outermost pattern when the contact hole in the center has a predetermined size, and to easily quantify the coma aberration by controlling the size or pitch of the contact hole pattern. CONSTITUTION: Patterns are formed on a predetermined substrate. A plurality of the patterns as the contact hole patterns(20) are formed of a checked type in an X-Y direction. The line width and pitch of the right/left outermost patterns is measured to quantify the coma aberration of the exposure equipment. An asymmetrical line width by the coma aberration is (L1-L2)/(L1+L2) wherein L1 and L2 are the line width of both outermost patterns in a desired measurement direction when the center pattern of the contact hole patterns has a specific line width.
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申请公布号 |
KR20020053902(A) |
申请公布日期 |
2002.07.06 |
申请号 |
KR20000081781 |
申请日期 |
2000.12.26 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
AHN, CHANG NAM;KIM, SANG JIN |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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