| 摘要 |
PURPOSE: A MOS charge pump of a semiconductor memory device is provided, which operates with a low voltage by increasing an output voltage of a high voltage charge pump by generating a pumping clock signal. CONSTITUTION: The first pumping clock signal generation part(210) generates the first pumping clock signal by performing a charge pumping through a capacitor(C7), by receiving clock signals(CLK0,CLK1) having opposite phases each other. The second pumping clock signal generation part(220) generates the second pumping clock signal(CLK1H) by performing a charge pumping through cross-coupled transistors(MN5,MN6) and capacitors(C5,C6) connected to the transistors(MN5,MN6), by receiving the clock signal(CLK1). And a high voltage charge pump(230) increases an output voltage(Vpp) by performing the charge pumping, by receiving the clock signals and the first and the second pumping clock signal.
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