| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problem of a semiconductor display device constituted of a polycrystalline silicon TFT being constituted of a pixel area and a peripheral circuit, appropriate TFT characteristics being different for respective circuits and manufacturing processes become complicated even though it is preferable to form separate TFT structures for the respective circuits, in terms of improving the performance of the semiconductor display device. SOLUTION: In the formation of a GOLD structure TFT provided with both of an Lov region and an Loff region, by independently implanting ions to the Lov region with a negative resist pattern formed in a self-aligned manner by a back-surface exposure method as a mask, independent control of the impurity densities of the Lov region and the Loff region is made possible. Thus, the GOLD structure TFT provided with both of hot carrier resistance and an off- current suppression effect is formed, and the compatibility for manufacturing process of this semiconductor device in simplifying and in performance is realized.</p> |
