| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve an interface characteristic between a dielectric film and a lower electrode by preventing the oxidation of the lower electrode during a heat treatment process. CONSTITUTION: An interlayer insulation film(2) is deposited on a semiconductor substrate(1) and a contact hole is formed by an etching process. After forming a contact plug(3), the lower electrode(4) of TiN is formed on the surface. The first dielectric layer of TaON is formed on the surface by a MOCVD(Metal Organic Chemical Vapor Deposition) process and the second dielectric layer of Ta2O5 is formed on the surface through a rapid heat treatment process. The third dielectric layer is formed on the surface by a deposition and a heat treatment process. The dielectric film is formed by improving the surface quality of the third dielectric film through the heat treatment. The lower electrode of a layered structure is formed on the surface.
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