发明名称 HIGH-FREQUENCY INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To manufacture an integrated circuit device wherein the deterioration of the performance of its circuit generated due to dielectrics can be reduced and its reliability relative to physical shocks is also made high. SOLUTION: In the integrated circuit device, a semiconductor chip 103 is subjected to flip-chip mounting on the surface of a wiring board 110, so as to joint it mechanically to the wiring board 110 by using an insulating bonding agent 104. In the wiring board 110, there is formed a cavity region 106, having such a shape/dimension that the insulating bonding agent will not penetrate to reach active circuits 10f7 provided in the semiconductor chip 103.
申请公布号 JP2002190545(A) 申请公布日期 2002.07.05
申请号 JP20000391413 申请日期 2000.12.22
申请人 MATSUSHITA COMMUN IND CO LTD 发明人 OGURA HIROSHI;HASHIDATE YUJI;URABE TAKEHARU;SAGAWA USHIO;FUJITA TAKU;TAKAHASHI KAZUAKI
分类号 H01L23/12;H01L21/60;H01P3/02 主分类号 H01L23/12
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