| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device of high reliability and proper characteristics, capable of including a ferroelectric capacitor and a thermal process at a required temperature, after wiring formation. SOLUTION: Related to a TC parallel unit series connection type ferroelectric memory, a first contact 15 between one side source/drain diffusion layers 5 and 6 and a lower part electrode 9, and a second contact 17 between an upper part electrode 11 and the other side of source/drain diffusion layers 5 and 6, are formed from a first oxidation resistant conductive film 13 and a second oxidation resistant conductive film 16, respectively. A hydrogen block film 33 is provided on a capacitor, which comprises an opening part 38 in a region with no memory cell which is present at each memory cell block, by utilizing a memory cell block structure specific to the TC parallel unit series-connected type ferroelectric memory. |
