| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, wherein contact holes formed for an upper part electrode of a capacitor and a conductive part below it are prevented from penetrating the upper part electrode for a desired contact. SOLUTION: There are provided a first W plug 126 formed on a silicon substrate 100, first and second interlayer insulating films 118 and 119 covering it, a capacitor in the interlayer insulating films where an upper electrode 124 comprises a polysilicon film, a protective film 131 formed on the upper electrode 124, a third interlayer insulating film 150 so formed as to cover the capacitor, a first contact hole 161 which penetrates it to contact to the upper electrode 124, and a second contact hole 160 which penetrates the interlayer insulating films 118, 119, and 150 to contact to the first W plug 126. The protective film 131 is made from a material, whose etching rate is lower than that of the interlayer insulating films 118, 119, and 150, when the contact holes 161 and 160 are formed. |
