| 摘要 |
PROBLEM TO BE SOLVED: To fully suppress the junction leakage, while keeping the p-n junction of the source and the drain at a shallow position, and to make a silicon layer formed on the source and the drain thin, in a structure wherein a silicide layer is formed to reduce the resistance of the source and the drain. SOLUTION: A MOSFET comprises the silicide layer, formed above the source and the drain region formed in the surface of a silicon substrate, with a gate electrode interposed in-between. In the manufacture of the MOSFET, silicon layers 521 and 522 which are to be turned into a silicide layer is formed by CVD method, in a region to be formed with the silicide layer separated from the source and the drain region 111 and 112 by spacers 701 and 702; and thereafter, a Co film is formed through sputtering method on the silicon layer 521 and 522; then a heat treatment is conducted to turn the Co film into silicide to form a silicide layer 801 and 802; and then silicon layers 901 and 902 for interconnection are formed so as to fill in the spaces 701 and 702.
|
