| 摘要 |
PROBLEM TO BE SOLVED: To prevent oxidation of a base film and to provide a utilizing method of an epitaxial substrate to which the oxidation preventing effect is given, in the epitaxial substrate provided with the Al-containing group III nitride base film. SOLUTION: The group III nitride epitaxial substrate is provided with a base material composed of a single crystal material such as sapphire or SiC, the group III nitride base film formed by epitaxial growth on the base material and containing at least Al, and a GaN film formed on the group III nitride base film and having preferably >=50 Å thickness. The formation of a group III nitride base film on the base material is performed continuously after an oxidized surface layer part is removed by etching. |
