LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a level shift circuit capable of preventing the breakage of transistors composed of low breakdown strength elements. SOLUTION: The third and fourth transistors Q15 and Q16 are composed of the elements, whose breakdown strength between source drains is low and are driven by low power voltage VD1. A voltage generation circuit 13 applies voltage generated to the gates of the fifth and sixth transistors Q17 and Q18 so as not to break the transistors Q15 and Q16 based on high power voltage VD2. The transistors Q15 and Q16 are prevented from being applied with the voltage VD2 exceeding the breakdown strength between source drains when the first and second transistors Q13 and Q14 are turned on. By restricting voltage to be applied from the voltage VD2, the transistors Q15 and Q16 composed of the low breakdown strength elements are prevented from being broken.