发明名称 PHASE SHIFT MASK BLANK, PHASE SHIFT MASK AND METHOD FOR PRODUCING PHASE SHIFT MASK
摘要 <p>PROBLEM TO BE SOLVED: To provide a phase shift mask blank having a phase shifter formed with a film based on a fluorine doped metal silicide as a phase shift mask blank obtained by forming at least one phase shifter on a transparent substrate and to provide a phase shift mask and a method for producing the phase shift mask. SOLUTION: The phase shift mask blank and phase shift mask have satisfactory transmittance and age stability even when a short wavelength light source is used and have such high performance that they can be adapted to the refining and higher integration of a semiconductor integrated circuit.</p>
申请公布号 JP2002189283(A) 申请公布日期 2002.07.05
申请号 JP20000394991 申请日期 2000.12.26
申请人 SHIN ETSU CHEM CO LTD 发明人 OKAZAKI SATOSHI;KANEKO ICHIRO;MORIYA JIRO;SUZUKI MASAYUKI;MARUYAMA TAMOTSU
分类号 C23C14/06;G03F1/32;G03F1/46;G03F1/68;G03F1/80;(IPC1-7):G03F1/08;G03F1/14 主分类号 C23C14/06
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