发明名称 |
PHASE SHIFT MASK BLANK, PHASE SHIFT MASK AND METHOD FOR PRODUCING PHASE SHIFT MASK |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a phase shift mask blank having a phase shifter formed with a film based on a fluorine doped metal silicide as a phase shift mask blank obtained by forming at least one phase shifter on a transparent substrate and to provide a phase shift mask and a method for producing the phase shift mask. SOLUTION: The phase shift mask blank and phase shift mask have satisfactory transmittance and age stability even when a short wavelength light source is used and have such high performance that they can be adapted to the refining and higher integration of a semiconductor integrated circuit.</p> |
申请公布号 |
JP2002189283(A) |
申请公布日期 |
2002.07.05 |
申请号 |
JP20000394991 |
申请日期 |
2000.12.26 |
申请人 |
SHIN ETSU CHEM CO LTD |
发明人 |
OKAZAKI SATOSHI;KANEKO ICHIRO;MORIYA JIRO;SUZUKI MASAYUKI;MARUYAMA TAMOTSU |
分类号 |
C23C14/06;G03F1/32;G03F1/46;G03F1/68;G03F1/80;(IPC1-7):G03F1/08;G03F1/14 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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