| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a thin oxide film of alumina, or the like, in a short time without oxidizing the underlying layer. SOLUTION: In the method for fabricating a magnetic tunnel junction element, when an alumina film is formed as a tunnel barrier film on a ferromagnetic layer 16 of Ni-Fe alloy, or the like, an aluminum film 18 is formed by sputtering on the ferromagnetic layer 16 and then oxidized while coating it with an alumina film by reactive sputtering. Assuming the aluminum film 18 is 1 (nm) thick and the coating alumina film is 0.2 (nm) thick, an alumina film of about 1.5 (nm) thick comprising a laminate of the oxidized aluminum film 18 and the coating alumina film is formed on the ferromagnetic layer 16. Surface of the ferromagnetic layer 16 is protected against oxidation by the aluminum film 18.
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