发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND APPARATUS AND METHOD FOR HEAT TREATMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for activating impurity elements added to a semiconductor film in the heat treatment of short time, without deforming a board and gettering the semiconductor film, in a manufacturing step of a semiconductor device using the board having a low heat resistance, such as a glass or the like, and to provide an apparatus for heat treating capable of such heat treating. SOLUTION: The method for heat treating is a method of heat treating by irradiating a light emitted from a lamp light source. A light-irradiating time interval per light source is 0.1 to 20 s, and the light from the light source is irradiated a plurality number of times. A light is irradiated from the light source, so that a holding time of the highest temperature of a region to be irradiated is 0.5 to 5 s. Further, accompanying the light source flashings, the supply amount of refrigerant is increased or decreased, so as to enhance heat treatment effects of the film, and to prevent damages to the board due to heat.
申请公布号 JP2002190452(A) 申请公布日期 2002.07.05
申请号 JP20010313318 申请日期 2001.10.10
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 ORIKI KOJI
分类号 H01L21/20;H01L21/26;H01L21/336;H01L29/786;(IPC1-7):H01L21/26 主分类号 H01L21/20
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