METHOD FOR ISOLATION FILM OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for an isolation film of a semiconductor device is provided to restrain a void created by the gap filling by performing the gap filling after progressing the gap filling through the SEG(Selective Epitaxial Growth). CONSTITUTION: A pad oxide film(20) and a pad nitride film(30) are successively formed on a semiconductor substrate(10). A resist pattern for exposing a device isolation area is formed on the pad nitride film. A shallow trench is formed by etching the pad nitride film, the pad oxide film and the substrate. A thermal oxide film is formed to the inside of the upper part of the nitride film and to the inside of the shallow trench by implanting a nitrogen. The oxide film on a bottom of the shallow trench is removed and the gap filling(60) is performed after the SEG(50) is progressed at the inside of the shallow trench.