| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to improve the deterioration of a short channel effect as well as to utilizing a merit through the formation of a facet when forming an elevated source/drain junction by using an SEG(Selective Epitaxial Growth) method. CONSTITUTION: An LDD(Lightly Doped Drain) area(26) is formed on a semiconductor substrate(21) configured by a structure layering a gate oxide film(23), a gate electrode(24) and a hard mask layer(25) by injecting an LDD ion. The first insulation spacer(27a) is formed on a sidewall of the layered structure. The elevated source/drain junction(28) having the facet(F) is formed on the junction area exposed after forming the first insulation spacer. The second insulation spacer(27b) is formed on the sidewall of the first insulation spacer. A deep source/drain junction(29) is formed on the substrate by injection a source/drain ion and the second insulation spacer is selectively removed. The elevated source/drain junction is formed by growing an epitaxial silicon layer with a thickness of 10-100 nm through the SEG method.
|
