| 摘要 |
PURPOSE: A method for forming the copper wiring of a semiconductor device is provided to maintain an effective resistance of a trench ideally and to enhance reliability of the wiring by forming the copper wiring after forming a diffusion barrier film instead of a diffusion barrier conductive film. CONSTITUTION: A lower copper wiring(12) and an insulation film are formed on a semiconductor substrate(11). The insulation film is formed by successively stacking a copper diffusion barrier layer(13), the first insulation film(14), an etching barrier layer(15), a second insulation film(16) and a hard mask layer(17). A dual damascene pattern consisting of a contact and a trench is formed on the insulation film. After the dual damascene process, the lower copper wiring is exposed and a copper oxide film is formed. The diffusion barrier insulation film(19) is formed on the dual damascene pattern. The hard mask layer is exposed by etching the diffusion barrier insulation film and the copper oxide film is removed. After forming a copper seed layer, the upper copper wiring(20) is formed by a heat treatment process and a CMP process.
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