发明名称 DEVICE FOR MEASURING MICRO DEFECT OF WAFER SURFACE
摘要 PURPOSE: A device for measuring a micro defect of a wafer surface is provided to easily and reproductively measure the micro defect under the nm sizes caused by a scratch. CONSTITUTION: The device for measuring the micro defect comprises a stage(13) mounting a wafer(11), a laser generator(15) scanning and applying the laser to the wafer with an inclination, a lens(17) detecting the light scattered by the micro defect of the wafer surface, an image capturing device(19) picturing the wafer surface by transforming the light detected by the lens into an electric signal, and a monitor(21) outputting the wafer surface after transforming the wafer surface pictured by the image capturing device into a video signal. The stage moves on the wafer surface along the X and Y axis. The laser generator comprises an Ar, Ne or Ru laser and generates the laser within the visible wavelength range of 400-800nm.
申请公布号 KR20020053621(A) 申请公布日期 2002.07.05
申请号 KR20000083330 申请日期 2000.12.27
申请人 SILTRON INC. 发明人 JUNG, SU CHEON;KIM, EUN HA
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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