发明名称 MAGNETORESISTIVE EFFECT ELEMENT AND ITS FABRICATING METHOD AND METHOD FOR FORMING COMPOUND MAGNETIC THIN FILM
摘要 PROBLEM TO BE SOLVED: To improve heat resistance, magnetic field shift, and the like, of a magnetoresistive effect element. SOLUTION: The magnetoresistive effect element comprises a multilayer fixed magnetic layer comprising at least one nonmagnetic layer and magnetic layers sandwiching the nonmagnetic layer wherein the magnetic layers are coupled magnetostatically through the nonmagnetic layer. The magnetoresistive effect element exhibits an improved heat resistance. A magnetoresistive effect element where the multilayer fixed magnetic layer is coupled magnetostatically or antiferromagnetically to cause negative magnetic coupling is also provided. This element reduces shift of magnetic field. Furthermore, a magnetoresistive effect element where at least one of the magnetic layers sandwiching an intermediate layer contains an oxide ferrite having an orientation face of (100), (110) or (111) and an external magnetic field is introduced into that orientation face is provided. This elements exhibits a high variation rate of resistance by magnetic field.
申请公布号 JP2002190631(A) 申请公布日期 2002.07.05
申请号 JP20010268655 申请日期 2001.09.05
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 HIRAMOTO MASAYOSHI;SAKAKIMA HIROSHI;ADACHI HIDEAKI;MATSUKAWA NOZOMI;IIJIMA KENJI;SATOMI MITSUO
分类号 G01R33/09;C23C14/34;G11B5/39;H01F10/08;H01F10/20;H01F10/32;H01F41/14;H01F41/18;H01L21/8246;H01L27/105;H01L43/08;H01L43/12;(IPC1-7):H01L43/08 主分类号 G01R33/09
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