发明名称 METHOD FOR HOLDING SUBSTRATE AND SUBSTRATE HOLDING SYSTEM
摘要 PURPOSE: A substrate holding system is provided to reduce the generation of foreign substances during an etch process of the substrate and improve yield of the substrate by preventing the substrate from sliding due to electrostatic attraction and by preventing the substrate from being increased by a gas pressure on the back surface of the substrate without using a member like a weight on the substrate. CONSTITUTION: A ring-shaped leakage-proof surface has a smooth surface on the specimen table corresponding to the periphery of the substrate(1). A plurality of contact holding portions is within the periphery of the substrate. An electrostatic attraction unit fixes the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface don't contact each other in the large portion of the remaining area.
申请公布号 KR100345207(B1) 申请公布日期 2002.07.05
申请号 KR20020013791 申请日期 2002.03.14
申请人 HITACHI, LTD. 发明人 TAKAHASHI KAZUE;OGAWA YOSHIFUMI;ITO YOUICHI;TAMURA NAOYUKI;SHICHIDA HIROYUKI;TSUBONE TSUNEHIKO
分类号 H01L21/00;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 H01L21/00
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