发明名称 |
HALFTONE PHASE SHIFT MASK AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME |
摘要 |
<p>PROBLEM TO BE SOLVED: To reduce the number of steps required to produce a halftone phase shift mask, to reduce the time and cost required to produce the mask, to enhance yield and to provide a halftone phase shift mask having high size controllability. SOLUTION: A light shielding zone comprising a resist is formed on a halftone film comprising a photosensitive composition to obtain a halftone phase shift mask structure.</p> |
申请公布号 |
JP2002189282(A) |
申请公布日期 |
2002.07.05 |
申请号 |
JP20000388039 |
申请日期 |
2000.12.21 |
申请人 |
HITACHI LTD |
发明人 |
TANAKA TOSHIHIKO;HASEGAWA NORIO;HATTORI KOJI |
分类号 |
G03F1/32;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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