发明名称 HALFTONE PHASE SHIFT MASK AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME
摘要 <p>PROBLEM TO BE SOLVED: To reduce the number of steps required to produce a halftone phase shift mask, to reduce the time and cost required to produce the mask, to enhance yield and to provide a halftone phase shift mask having high size controllability. SOLUTION: A light shielding zone comprising a resist is formed on a halftone film comprising a photosensitive composition to obtain a halftone phase shift mask structure.</p>
申请公布号 JP2002189282(A) 申请公布日期 2002.07.05
申请号 JP20000388039 申请日期 2000.12.21
申请人 HITACHI LTD 发明人 TANAKA TOSHIHIKO;HASEGAWA NORIO;HATTORI KOJI
分类号 G03F1/32;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/32
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