| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device comprising memory cells of MOS-type structure and its fabricating method, in which reduction in the resistance of a gate electrode and a source/drain region and reduction in the source/drain contact resistance are realized. SOLUTION: The semiconductor storage device comprises memory cells MC of MOS-type structure, having a gate electrode G formed on a semiconductor substrate, a source region S and a drain region D formed on the opposite sides of the gate electrode G wherein the source region S has a metal silicide layer 121 only in the source contact region. Since the metal silicide layer 121 will not be formed on the surface of the source region S, even if protrusions and recesses are present thereon, the metal silicide layer 121 will not be formed in broken state at the protrusions and recesses. Since a metal forming the metal silicide layer 121 will not absorb silicon atoms in the source region S, electrical resistance of the source region S is prevented from increasing. Furthermore, source contact resistance can be reduced, because the metal silicide layer 121 is formed in a region for forming a source contact electrode SC.
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