| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor wherein an on-state current can be increased, while reducing leakage current, and also to provide a method of manufacturing the same. SOLUTION: The thin-film transistor comprises a gate electrode 4, formed on a semiconductor thin film 2 via a gate insulation film 3, and a source region and a drain region which are formed in the semiconductor thin film 2 with a channel region 5 formed under the gate electrode 4 interposed in-between. The source region and the drain region comprise first lightly-doped regions 6A and 6B, second lightly-doped regions 7A and 7B, and heavily-doped regions 8A and 8B, which are disposed in this order in a direction away from the channel region 5. The carrier concentration in these impurity regions becomes higher, going away from the channel region 5, with the impurity concentration in the impurity regions 7A and 7B being higher than those in the impurity regions 6A and 6B, and the impurity concentration in the impurity regions 8A and 8B being higher than those in the impurity regions 7A and 7B.
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