| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor wafer, with which an SIMOX wafer in which an SOI layer defect density is reduced using a simple operation can be obtained. SOLUTION: The SOI layer defect density can be reduced by setting an ion current density at an oxygen ion implantation time is set to 1 mA/cm2 or less. Thus, when the oxygen ion implantation is executed with a prescribed amount of the ion current amount, a beam-irradiating area is increased, without changing the ion current amount and the ion current density is set to 1 mA/cm2 or less.
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