| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, together with its manufacturing method which comprises a capacitor, in which an electrode comprises noble metal material, capable of enhancing adhesion between a capacitor electrode and an interlayer insulating film. SOLUTION: The semiconductor device is provided with comprises a capacitor comprising a storage electrode 76, a capacitor dielectrics film 78, and a plate electrode 88. Here, the plate electrode 88 comprises an electrode layer 80 formed from a noble metal material, an electrode layer 82, which is formed on the electrode layer 80 and acts as an adhesion layer of it, and an electrode layer 84 on the electrode layer 82, formed from a material whose specific resistance is lower than the material constituting the electrode layer 82. |
