METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming the metal wiring of a semiconductor device is provided to remove a crack and decrease a polymer particle due to the resist loss by patterning a metal film with fluorine group gas. CONSTITUTION: A photoresist film(108) is deposited on a conductive layer of Ti/TiN/Al/Ti/TiN. A part of the photoresist film is selectively exposed and an exposed area is etched. An ARC(Anti Reflective Coating) layer(106) is dry etching by using the etched photoresist film as a pattern mask. The dry etching process is carried out at an electric power of 50-300 watts and a pressure of 10-30 mT under an Ar gas 50-200 sccm and CF4 gas 20-100 sccm atmosphere. The metal wiring process is completed by successively etching a Ti/TiN barrier layer(102) and an aluminum alloy conductive layer(104).