BOOSTING VOLTAGE GENERATION CIRCUIT

摘要

PURPOSE: A boosting voltage generation circuit is provided, which reduces a current consumption, by lowering the second boosting voltage(Vpp2:Vpp+nVtn) to the first boosting voltage(Vpp) during a burn-in test mode. CONSTITUTION: The first boosting voltage generation part(10) generates the first boosting voltage(Vpp) by inputting an external power supply voltage(Vext), and the second boosting voltage generation part(20) generates the second boosting voltage(Vpp2) by inputting the external power supply voltage. A number of NMOS transistors(Nn) are connected between the second boosting voltage and the first boosting voltage in a diode structure. A PMOS transistor(P1) is connected between the second boosting voltage and the first boosting voltage and is switched during a burn-in mode. And a level shifter part(40) generates a signal driving the PMOS transistor during the burn-in mode.