TRANSISTOR AND DISPLAY DEVICE PROVIDED WITH THE TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a structure which restrains variations in parasitic capacitance of a transistor and contributes to the uniformity of image quality of a display device. SOLUTION: In the transistor 1, a source electrode 9 and a drain electrode 10 are arranged, facing a gate electrode 5 via a semiconductor layer 7. The drain electrode 10 is formed in a rod, and the source electrode 9 is formed in a slender shape. In the source electrode 9, a recessed part 9a for accepting the tip 10a of the drain electrode 10 is formed on a side facing the drain electrode 10. Parts of the semiconductor layer 7 are protruded from the gate electrode 5. The protruded parts are positioned on the source electrode 9 and the drain electrode 10 which are not overlapped with the gate electrode 5, when in plan view. The protruded part positioned on the source electrode 9 and the protruded part positioned on the drain electrode 10 are shaded by the gate electrode 5, and are set independent of each other.