发明名称 |
Method to improve silicide formation on polysilicon |
摘要 |
A polysilicon layer of a gate structure is covered by a film that blocks introduction of implanted dopants into the polysilicon layer, while allowing implantation into the source and drain. The implant blocking film is removed before metal deposition for the salicide process.
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申请公布号 |
US2002086485(A1) |
申请公布日期 |
2002.07.04 |
申请号 |
US20010023825 |
申请日期 |
2001.12.19 |
申请人 |
KITTL JORGE ADRIAN;HONG QI-ZHONG |
发明人 |
KITTL JORGE ADRIAN;HONG QI-ZHONG |
分类号 |
H01L21/265;H01L21/3213;H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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