Hochfrequenz-Halbleitervorrichtung und Verfahren zum Herstellen der Hochfrequenz-Halbleitervorrichtung

摘要

A novel h.f. semiconductor device has: (i) a FET (10) with a gate electrode (2) on one surface; (ii) a passivation layer (5) of SiO2 or SiN on the gate electrode and part of the FET surface near the gate electrode; and (iii) a cover layer (7) of fluorine-contg. resin with a dielectric constant of less than 3.2 and a thickness of more than 2 microns, located on the passivation layer; and a cast resin (pref. epoxide resin) encapsulating the FET (10) and the layers (5,7). Also claimed is a process for the prodn. of the above device.