发明名称 CONTACT SCHEME FOR INTRACAVITY-CONTACTED VERTICAL-CAVITY SURFACE-EMITTING LASER
摘要 A vertical cavity surface emitting laser, or VCSEL, (10) includes a semiconductor device having a pair of mirror portions (18, 20), an active region (14), a tunnel junction (16), a pair of cladding layers (12a, 12b) and a substrate (32). Heat generated by the VCSEL (10) dissipates through the cladding layers (12a, 12b), which utilize an indium phosphide material. The VCSEL (10) also includes selective etches that are used to aperture the active region (14) to allow electric current to be injected into the active region (14).
申请公布号 WO0217446(A8) 申请公布日期 2002.07.04
申请号 WO2001US41830 申请日期 2001.08.22
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 COLDREN, LARRY;HALL, ERIC, M.;NAKAGAWA, SHIGERU
分类号 H01S5/024;H01S5/042;H01S5/183;H01S5/30;H01S5/323;H01S5/343;(IPC1-7):H01S5/30;H01S5/00 主分类号 H01S5/024
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